1.
We successfully fabricated the a-Si edge¡Borientation and angle
detectors with signal processing capability. These detectors
can directly detect the edge¡Borientation and angle of a feature
in an image.
2. We successfully fabricated the a-SiGe X-ray photodetector
which has a better photoresponse than that of a traditional
a-Si detector.
3. We developed a low-temperature fabrication process of amorphous
and poly silicon thin film transistor using liquid phase deposition
of SiO2 as the gate oxide.
4. We substituted hydrogen with deuterium to fabricate amorphous
and poly- silicon thin film transistors for the first time,
which have better electrical performance and stability.
5. We discovered that the growth rate of Ni/Cu induced poly-Si
is 10 times faster than the traditional Ni-induced process with
comparable grain size. This leads to the potential industrial
applications.
6. We improved the excimer laser annealing method to enlarge
the poly-Si grain size to 10 £gm.
7. We successfully fabricated the SiGe quantum dot infrared
photodetector (QDIP) by the combination of bottom-up and top-down
technologies. The QDIP can be operated up to 240 K.
8. We successfully fabricated the near-room-temperature-operated
(~250 K) InAs/(Al)GaAs quantum dot infrared photodetector which
can lower the operation cost and widen the application areas.
9. We have successfully grow undoped and doped Si nanowires
with 10, 20, and 50 nm in diameters by LPCVD and measure their
structural, optical and electrical properties.
10.
We developed a new AMOLED pixel that has a solar cell inserted
between the driving TFT and the OLED pixel. Such an pixel structure
not only improves the contrast of the AMOLED but is also capable
of recycling part of the incident light and emitted photons
by OLED.
11.We
have successfully fabricated low temperature poly-silicon thin
film transistors (LTPS TFTs) prepared by excimer laser annealing
of hydrogenated amorphous silicon (a-Si:H) on polyimide with 370
cm2/V-sec field effect mobility.
12.
By utilizing surface plasmon, the infrared thermal emitter with
narrow bandwidth and tunable wavelength is developed successfully.
13.
It is demonstrated that the cross shaped hole arrays exhibit
more efficient transmittance of incident light than those of
the square and rectangular hole arrays with the same area and
lattice constant.
14.
By applying the surface plasmon phenomenon to quantum dot infrared
photodetector (QDIP), a wavelength selectable narrow bandwidth
detector is fabricated successfully.
